cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 1/9 MTP658G6 cystek product specification p-channel enhancement mode mosfet MTP658G6 bv dss -30v i d -5.2a r dson @v gs =-10v, i d =-5a 39m (typ.) r dson @v gs =-4.5v, i d =-3.7a 61m (typ.) r dson @v gs =-4v, i d =-3a 69m (typ.) r dson @v gs =-3v, i d =-1.5a 116m (typ.) description the MTP658G6 is a p-channel enhancement-mode mo sfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the tsop-6 package is universally preferred for a ll commercial-industrial surface mount applications. features equivalent circuit ? simple drive requirement MTP658G6 ? low on-resistance ? small package outline ? pb-free lead plating package g gate s source d drain absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current @v gs =-4.5v, t a =25 c (note 1) i d -5.2 a continuous drain current @ v gs =-4.5v, t a =70 c (note 1) i d -4.2 a pulsed drain current (note 2, 3) i dm -30 a pd 1.6 w total power dissipation @ t a =25 c linear derating factor 0.013 w / c operating junction and storage temp erature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient (note 1) r ja 78 c/w thermal resistance, junction-to-case r jc 25 note : 1.surface mounted on 1 in2 copper pad of fr-4 board. 156 /w when mounted on minimum copper pad. 2.pulse width lim ited by maximum junc tion temperature. 3.pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 2/9 MTP658G6 cystek product specification electrical characteristics (ta=25 c, unless otherwise noted) symbol min. typ. max. unit test conditions static bv dss -30 - - v v gs =0v, i d =-250 a bv dss / tj - -0.02 - v/ reference to 25 , i d =-1ma v gs(th) -1 -1.6 -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-24v, v gs =0v i dss - - -10 a v ds =-24v, v gs =0v, tj=55 - 39 50 i d =-5a, v gs =-10v - 61 75 i d =-3.7a, v gs =-4.5v - 69 85 i d =-3a, v gs =-4v *r ds(on) - 116 150 m i d =-1.5a, v gs =-3v - 6.2 - s v ds =-5v, i d =-4a *g fs - 3.3 - s v ds =-10v, i d =-1.75a dynamic ciss - 829 - coss - 85 - crss - 69 - pf v ds =-15v, v gs =0, f=1mhz t d(on) - 17 - t r - 12 - t d(off) - 24 - t f - 12 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =6 ? qg - 10 - qgs - 2.6 - qgd - 4.9 - nc v ds =-24v, i d =-5a, v gs =-5v source drain diode *i s - - -2 *i sm - - -8 a *v sd - -0.77 -1.2 v i s =-1.7a,v gs =0v *t rr - 28 - ns q rr - 22 - nc i s =-1.7a,v gs =0v,di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTP658G6-0-t1-g tsop-6 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 3/9 MTP658G6 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =3 v -v gs =4v 10v 9v 8v 7v 6v -v gs =5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-10v v gs =-3v v gs =-4.5v v gs =-4v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance r dson @tj=25c: 39m v gs =-10v, i d =-5a -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-5a
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 4/9 MTP658G6 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) , normalized threshold voltage i d =-250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) pulsed ta=25c v ds =-10v v ds =-5v gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-5a v ds =-24v v ds =-15v v ds =-5v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c r ja =78c/w, v gs =-10v single pulse 1s r ds( on) limit maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =78c/w
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 5/9 MTP658G6 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 02468 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =10v power derating curve 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 t a , ambient temperature() p d , power dissipation(w) mounted on fr-4 board with 1 in 2 p ad area transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =78 c/w
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 6/9 MTP658G6 cystek product specification reel dimension
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 7/9 MTP658G6 cystek product specification carrier tape dimension
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 8/9 MTP658G6 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c400g6 issued date : 2012.12.20 revised date : page no. : 9/9 MTP658G6 cystek product specification tsop-6 dimension inches millimeters inches millimeters dim min. max. min. max. style: pin 1. drain (d) pin 2. drain (d) pin 3. gate (g) pin 4. source (s) pin 5. drain (d) pin 6. drain ( d ) date code device name 6-lead tsop-6 plastic surface mounted package cystek package code: g6 marking: 658 dim min. max. min. max. a 0.1063 0.1220 2.70 3.10 g 0 0.0039 0 0.10 b 0.1024 0.1181 2.60 3.00 h - 0.0098 - 0.25 c 0.0551 0.0709 1.40 1.80 i 0.0047 ref 0.12 ref d 0.0748 ref 1.90 ref j 0.0177 ref 0.45 ref d1 0.0374 ref 0.95 ref k 0.0236 ref 0.60 ref d2 0.0374 ref 0.95 ref l 0 10 0 10 e 0.0118 0.0197 0.30 0.50 m - 0.0433 - 1.10 f 0.0276 0.0394 0.70 1.00 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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